high-speed analo n-channel dmos fets sd211 / sd213 / sd215 features high input to output isolation . . . . . . . . . . . . . . . . 120db low on resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 ohm low feedthrough and feedback transients low capacitance: C input (gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pf typ. C output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pf typ. C feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pf typ. built-in protection diode from gate to substrate applications sd211: analog switch driver sd213 and sd215: analog switches high-speed digital switches multiplexers a to d converters d to a converters choppers sample & hold description the calogic sd211 is a 30v analog switch driver with built-in protection diode from gate to substrate the sd211 is used with sd213 and sd215 dmos analog switches. ordering information part package temperature range sd211dehermetic to-72 package-55 o c to +125 o c XSD211sorted chips in carriers-55 o c to +125 o c sd213de hermetic to-72 package -55 o c to +125 o c xsd213 sorted chips in carriers -55 o c to +125 o c sd215de hermetic to-72 package -55 o c to +125 o c xsd215 sorted chips in carriers -55 o c to +125 o c llc schematic diagram (top view) calogic llc, 237 whitney place, fremont, california 94539, telephone: 510-656-2900, fax: 510-651-1076 ds057 rev a 1 2 3 4 gate drain source body and case body is internally connected to the case 1q-24 cd1-1 to-72 g d c s
absolute maximum ratings drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50ma total device dissipation at 25 o c case temperature . . . 1.2w storage temperatue range . . . . . . . . . . . . . -65 o c to +200 o c lead temperature (1/16" from case for 10 sec.). . . . . . 300 o c operating temperature range . . . . . . . . . . . -55 o c to +125 o c sd211 / sd213 / sd215 llc dc characteristics (t a = 25 o c, unless otherwise specified) symbol parameter sd211 sd213 sd215 units test conditions min typ max min typ max min typ max breakdown voltage bv ds drain-to-source 30 35 v v gs = v bs = 0v, i d = 10 m a 10 25 10 25 20 25 v gs = v bs = -5v, i s = 10na bv sd source-to drain 10 10 20 v gd = v bd = -5v, i d = 10na bv db drain-to-body 15 15 25 v gb = 0v, source open, i d = 10na bv sb source-to-body 15 15 25 v gb = 0v, drain open, i s = 10 m a leakage current i ds (off) drain-to-source 110 110 na v gs = v bs = -5v, v ds = +10v 110 v gs = v bs = -5v, v ds = +20v i sd (off) source-to-drain 110 110 v gs = v bd = -5v, v sd = +10v 110 v gs = v bd = -5v, v sd = +20v i gbs gate101010v db = v sb = 0v, v gs = +30 v v t threshold voltage 0.51.02.00.11.02.00.11.02.0v v ds = v gs = v t , i s = 1 m a, v sb = 0v r ds (on) drain-to-source resistance 50 70 50 70 50 70 w i d = 1.0ma, v sb = 0, v gs = +5v 30 45 30 45 30 45 i d = 1.0ma, v sb = 0, v gs = +10v 23 23 23 i d = 1.0ma, v sb = 0, v gs = +15v 19 19 19 i d = 1.0ma, v sb = 0, v gs = +20v 17 i d = 1.0ma, v sb = 0, v gs = +25v ac electrical characteristics symbol parameter sd211 sd213 sd215 units test conditions min typ max min typ max min typ max gfs forward transconductance 10 15 10 15 10 15 ms v ds = 10v, v sb = 0v, i d = 20ma, f = 1khz small signal capacitances c iss gate node 2.4 3.5 2.4 3.5 2.4 3.5 pf v ds = 10v, f = 1mhz v gs = v bs = -15v c oss drain node 1.3 1.5 1.3 1.5 1.3 1.5 c rss source node 0.3 0.5 0.3 0.5 0.3 0.5 information furnished by calogic is believed to be accurate and reliable. however, no responsibility is assumed for its use: no r for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent right s of calogic. calogic llc, 237 whitney place, fremont, california 94539, telephone: 510-656-2900, fax: 510-651-1076 ds057 rev a parameter sd211 sd212 sd215 unit v ds drain-to-source +30 +10 +20 v dc v sd source-to-drain +10 +10 +20 v dc v db drain-to-body +30 +15 +25 v dc v sb source-to-body +15 +15 +25 v dc v gs gate-to-source -15 +25 -15 +25 -25 +30 v dc v gb gate-to-body -0.3 +25 -0.3 +25 -0.3 +30 v dc v gd gate-to-drain -30 +25 -15 +25 -25 +30 v dc
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